Purpose:
For switching signals in microwave devices.
Specifications:
A p-i-n diode based on a silicon carbide mesa structure. Switching microwave signals up to 2 kW. Diodes can operate at temperatures up to 500 ° C. At room temperature, the diodes have a reverse voltage of 630 V, and at 500 ° C – 250 V.
Area:
Radio engineering.
Advantages:
Better than foreign counterparts in terms of power and operating temperature.