Purpose:
For precision processing of micro- and nanoelectronic products, microwave and computer technology.
Specifications:
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- Controlled ion energy – 20 to 800 eV.
- It is possible to process inserts with a diameter of up to 200 mm.
- Anisotropic processing speed, μm / min: Si – 0.7; W – 0.2; Au – 0.03; Al – 0.4; SiO2 – 0.2; SiC – 0.15; Ti – 1.0; Pt 0.015; Ge – 4.0; GaAs – 0.1; Si3 N4 – 0.2; TiN – 0.2; GaN – 0.07.
- Isotropic processing speed, μm / min.
- GaAs – 0.5, one Si wafer – 3.
- Working pressure – 10-3-10-1 mm Hg. Art.,
- Refining anisotropy – 10.
- Uneven processing – ± 5%.
- Magnetic field strength 20-200 E.
Area:
Instrument making.
Advantages:
There are no analogues. Technologies have been developed for the plasma-chemical processing of most materials found in microcircuits for various purposes, including silicon carbide and gallium nitride, and other nano- and microstructures.