Purpose. To improve the optical quality of grown dielectric crystals and increase their dimensions for the needs of functional electronics.
Specifications. Experimental samples of material for functional electronics are prepared from a mixture of Bi2O3 and TeO2 oxides and crystal growth by the Czochralski method from a double crucible; Crystal growth is carried out by pulling the crystal with an extraction speed of 0.2 – 0.4 mm/h and a rotation speed of 8 – 10 rpm.
Application area. Functional dual-use electronics, instrument making at enterprises of Ukroboronprom and the space industry.
Advantages. The developed technology takes into account the fact that as a result of the two-stage process of preparing the charge, a complete reaction takes place between the initial components and an almost stoichiometric system is formed, as well as the evaporation of tellurium oxide from the outer part of the crucible, which is much more intense, forms a saturated TeO2 vapor near the crystal-liquid interface of the inner part crucible Selected parameters of extraction and rotation speeds make it possible to obtain bulk single crystals.
Technical and economic effect. The developed technology makes it possible to obtain large-sized dielectric crystals, which are used at instrument-making enterprises in devices for defense, space and special-purpose equipment. Effective domestic functional materials will help save money on purchasing analogues abroad. Will increase the yield of defect-free crystals by 20%
Description. A mixture of chemical compounds is prepared. The mixture is synthesized in two stages. From the resulting charge, loaded into the inner crucible, onto a single-crystal seed. Then two conical crucibles are placed inside each other. The inner crucible is filled with the original charge, and the space between the inner crucible and the outer wall is filled with a compound with a lower melting point. The single crystal is grown using the Czochralski method.