Purpose. To develop new technologies for the production of materials, their processing and connection, to create an industry of nanomaterials and nanotechnologies. Solves the problems of: low radiation resistance of materials (Si, Ge); low radiation resistance of traditional solar cells
Application area. Energy saving, fundamental research, optoelectronics, energy, radiation technologies.
Advantages. Cheap and widely available materials; high radiation resistance of chalcogenides of elements of the second and third groups of the type (3АІІВVI)1-x(CIII 2BVI 3)х, (including Hg3In2Te6, Cd3In2Te6, etc.); high radiation resistance of solar cells based on these chalcogenide materials.
Description. The development involves the synthesis and growth of semiconductor crystals based on chalcogenides of elements of the second and third groups of the type (3АІІВVI)1-x(CIII 2BVI 3)х, (including Hg3In2Te6, Cd3In2Te6, etc.) and deposition of thin films based on them with high radiation. radiation. Based on the obtained materials, the creation of solar cells by depositing wide-gap oxide and nitride thin films on these as a window.