Purpose. For the creation or modernization of night vision devices built on devices with charge coupling and avalanche electron multiplication.
Specifications:
- Pad orientation 100
- Substrate type p
- Substrate resistance 0.05 Ohm x cm
- Type of epitaxial layer p
- Epitaxial layer resistance 30 Ohm x cm
- The thickness of the epitaxial layer is 20 microns.
- Number of photo templates 22
- Minimum pixel size (design standards) 0.5 microns
- Number of layers field Si 4
- Number of metallization layers 2
- Supply voltage 12 V
- Gate dielectric thickness 30 nm SiO2 +35 Si3N4
Application area. Integrated Circuit Manufacturing
Advantages. The combined advantages of CMON processes are high sensitivity of photodiodes, the ability to change the spectral range of the photodiode, low power consumption of peripheral circuits, high packaging density for the implementation of digital functions, and CCD processes are low noise level, the ability to implement electron multiplication.
Technical and economic effect. If we estimate the annual demand and, accordingly, the output of products for use in military and other equipment at 5000 pieces, then with the cost of introducing the technology at 732 million UAH. and 183 million UAH. operating expenses per year (according to the current NBU exchange rate), then in the first year of production the cost of a unit of production will be 182.8 thousand UAH.
Description. Combined CMOS (complementary metal-oxide-semiconductor) and CCD technology, using a specialized CCD register on which controlled electron avalanche multiplication occurs. This allows you to improve the performance of surveillance cameras in ultra-low light conditions without the use of external image intensifiers. The technology uses an epitaxial silicon wafer, 4 levels of polycrystalline silicon, 2 levels of metallization, CMON and CCD technological processes.