Purpose. For new highly sensitive photodetectors for the infrared wavelength range (2.5-3.5 microns).
Specifications. For the industrial production of photosensitive modules, InSb wafers with a donor concentration of 5•1014-2•1015 cm-3, parts of sapphire cases, a modern production line of microelectronic technologies are required, including implantation installations, specialized installations for plasma-chemical processing, microassembly installations and microassembly installations
Application area. Development and production of special-purpose instrumentation.
Advantages. The main advantages of this technology are the following: a high level of unification of designs and production technologies, the ability to manufacture new types of products, high sensitivity of photomodules, the ability to change the spectral range of photomodules, low consumer power, high packaging density.
Technical and economic effect. The estimated annual demand for the production of photomodules in special-purpose equipment is approximately 3000 pcs. in year. The costs of introducing the technology into mass production are estimated at UAH 480 million. In the first year of production, the cost per unit of production is determined based on the results of the production of pilot batches. The introduction of technology is important for ensuring the defense capability of Ukraine, and will also contribute to the creation of jobs in the instrument-making industries.
Description. The essence of the technology is based on the creation of a series of InSb photosensitive modules for the infrared wavelength range (2.5-5.5 microns). For this purpose, n-type single-crystal InSb plates with a donor concentration of 5•1014-2•1015 cm-3 are used. Packaged photomodules at operating cryogenic temperatures (80+2 °K) have an integral photosensitivity of 0.7-1.0 A/V when irradiated from a black body with a temperature of 500 °K. Development of multi-element photosensitive modules with a charge carrier concentration of 5•1014-2•1015 cm-3. A p+-n junction is formed by implantation of Be+ ions and sequential precision annealing. Next, using microelectronic technologies using plasma treatments, individual photocells with a protected p+-n junction are formed. Contacts in the p+ and n+ regions and the necessary topology elements are formed by vacuum deposition of thin layers of the Ti-Au type followed by galvanic deposition of Au. The wafers are separated into crystals using the disk cutting method. The crystals are mounted into an original sapphire case using microharvesting technology. The parameters of the current-voltage characteristic and photosensitivity in the infrared range (2.5-5.5 µm) are made in a typical operating mode of the photomodule elements at a reverse voltage of 10 mV and at a cryostat board temperature of 80.0 °K.