Purpose. The technology allows growing large-sized high-quality single crystals, which significantly reduces the cost of production (detectors) compared to the methods used to grow small-sized single crystals (Bridgeman and Stockbarger methods).
Technical properties. Production capacity – 8 tons per year.
Scope. Growing single crystals, instrument making.
Advantages. The technology allows growing large-sized single crystals, which significantly reduces the cost of the source material for manufacturing detectors, and therefore the cost of the final product.
Technical and economic effect. The introduction of the technology will reduce the cost of the final product, and will also contribute to the creation of additional jobs.
Description. The technological process of growing NaI (Tl) single crystals on “Rost” type installations consists of extracting a single crystal from the melt for single-crystal ignition with constant feeding of the melt with the source material. First, the heat chamber for growing and the units of the growth setup are prepared for growing (checking the equipment for operability) and the vacuum seals of the growth furnace are checked for leaks. Then, the raw material is loaded into the crucible and the half-cases are joined. Before starting growing, the growth furnace is additionally checked for leaks and moisture. After melting the raw material and bringing the melt temperature to the required value, the growth furnace is checked again for vacuum, after which growing begins, which consists of growing the single crystal to the required final diameter and then to the required final height. Then, the furnace is uncoupled and the grown single crystal is unloaded into a thermos, where it is annealed and cooled to room temperature.