Thin-film thermoelectric materials for operating temperatures 50–400 ° С

Purpose:

Film thermoelectric materials are effectively used to create thermoelectric microgenerators of energy and thermoelectric microcoolers.

Specifications:

Thermoelectric figure of merit ZT ~ 0.5–2, temperature range 50–400 ° С.

Area:

Thermoelectricity.

Advantages:

The main advantages are the simplicity of the technological process control and the low cost of the necessary equipment, which significantly reduces the cost of the final product.

Description:

A technology is proposed for the deposition of composite semiconductor materials by vacuum methods (deposition from an open vacuum, “hot wall” or deposition from a gas-dynamic vapor flow). By controlling technological factors (substrate and heater temperatures, deposition time and substrate material), a technology for the deposition of materials with optimal thermoelectric parameters has been developed. The technology was developed and tested on modern equipment acquired through a NATO science program project.

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