Purpose. The technology is designed to simplify manufacturing, expand the photosensitivity and application range, and radiation resistance of the receiver by changing process operations.
Description. The technology for producing a sensitive element for an IR radiation photodetector is aimed at expanding the range of photosensitivity and application, as well as the radiation resistance of such a photodetector. The material from which the sensitive element was made was an n-type silicon single crystal grown by the Czochralski method and doped with a phosphorus impurity with a concentration of 2.2 x 1016 cm-3. This sensitive element was manufactured in the shape of a rectangular parallelepiped and irradiated with electron beams with an energy of 12 MeV ranging from 5•1016 to 3•1017 el/cm2. In this case, the silicon single crystal obtained using the proposed technology and, accordingly, the sensitive element will be simultaneously photosensitive at wavelengths λ=1.1 μm, λ=11.6 μm and λ=12 μm of infrared radiation.
Specifications. The sensitive element of the IR radiation photodetector is made on the basis of silicon single crystals irradiated with electrons with an energy of 12 MeV and a flux of up to 3•1017 electrons/cm2, doped in the process of growing using the Czochralski method with phosphorus impurities, a concentration of 2.2•3 rectangular parallelepipeds, is photosensitive to wavelengths λ=1.1 µm, λ=11.6 µm and λ=12 µm of infrared radiation.
Advantages. Relatively low cost, high radiation resistance, ability to detect both short- and long-wavelength infrared radiation.
Application area. Instrumentation, telecommunications, construction, photoelectronics, medicine.
Novelty. 1 patent of Ukraine.
Technology readiness stage. At the testing stage.
Proposals for cooperation. Sale of patents.