PURPOSE:
The developed photosensitive nanostructures based on porous silicon and zinc oxide can be used for the production of semiconductor photodetectors, cascade photoelectric converters and detectors of electromagnetic radiation in a wide spectral range.
DESCRIPTION:
Photosensitive structures based on porous silicon and electrochemically deposited ZnO arrays on its surface have been created, which are characterized by a wide spectral range of sensitivity – from ultraviolet to near-infrared radiation. A postoperative technology for obtaining photosensitive structures has been developed through the use of new technological methods that will simplify the technological process of obtaining photodetectors and expand their spectral sensitivity.
ADVANTAGES:
The method makes it possible to simplify and reduce the cost of the technology for obtaining photodetectors, since it does not provide for the use of costly equipment, complex, time-consuming and energy- and material-intensive procedures. The fabrication of photosensitive structures using affordable, cheap and environmentally friendly materials provides high sensitivity in the spectral range of 400-1000 nm, which is due to the large absorbing surface area and different bandgap of ZnO nanocrystals, porous silicon, and the silicon substrate.
RECOMMENDED FIELD OF APPLICATION:
Radioelectronic and optoelectronic instrumentation.
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