Creation of nanocomposites based on semiconductor compounds of ruthenium and cadmium for GIS elements and microelectronic sensors

What is the priority direction of science and technology: new substances and materials.

Research: applied.

Future prospect: completed.

Research level: no analogues in Ukraine.

Availability of a patent: 1 patent.

What additional actions require further research: requires funding to implement the results obtained.

Brief description, advantages, further prospects for application.

Qualitatively new heterophase nanocomposite semiconductor materials and non-ideal heterojunctions for elements of hybrid integrated circuits (HIC) and microelectronic sensors (MES) have been created, which have significantly better electrical parameters and stability than existing analogues. Methods have been developed to reduce the degradation processes of composite materials and methods have been proposed to improve the stabilization of the main characteristics, varying and controlling the electrical parameters of the elements of GIS and MES of optical and X-ray images based on non-ideal heterojunctions.

For the first time, instead of toxic lead oxide, bismuth oxide was used as the main glass-forming component, which makes it possible to obtain more fusible glasses with a significantly reduced softening onset temperature of 400–430 ° C, increased specific surface resistance, which makes this material promising. in the manufacture of thick-film resistors for operation in high-voltage equipment with a voltage of (10 – 25) kV, as well as a glass binder for thick-film nanocomposite elements and dielectric layers of multilevel GIS.

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