Establishment of regularities of reactions of interaction and disproportionation in the systems Germanium – chalcogenide (oxide) of a metal of II-IV groups – Boron oxide at high temperatures and high vacuum (inert medium) and their influence on the formation of nanostructures

Which priority area of ​​science and technology does it correspond to: New substances and materials.

Research: fundamental.

Prospect for further implementation: to be continued as fundamental.

Research level: no analogues in the world.

Availability of a patent: No

What additional actions require further research: Provision of equipment for spectroscopic studies.

Brief description, advantages, further prospects for application.

The general regularities of the interaction of B2O3 with CVD composites in Ge-MxOy-B2O3(M – Zn, In, Ge, Sn) systems have been established. The fact of deep chemical interaction in systems containing ZnO and In2O3 with boron oxide with the formation of complex oxide compounds such as metal borates was revealed, which was confirmed by XRD and IR spectroscopy. In systems containing GeO2 and SnO2, there is no chemical interaction, but glass formation takes place instead. These experimental facts correlate with an increase in electronegativity in the indicated series of metal oxides. Under normal conditions, the addition of Germany does not significantly affect the nature of the interaction and, obviously, will play a decisive role in the thermal evaporation of composites in vacuum. At the same time, boron oxide should influence the volatility of the components and, to a certain extent, equalize them. Thus, in the case of the Ge-ZnO-B2O3 system, the lightness of the CVD composite (Ge-ZnO) should decrease through the interaction of ZnO with B2O3. At the same time, the decrease in volatility through the interaction will contribute to the convergence of the vapor pressures of evaporation products in vacuum (GeO and In2O) in the Ge-In2O3-B2O3 system. In the Ge-GeO2-B2O3 system, one should expect the achievement of optimal conditions for the evaporation of GeO as an interaction product. At the same time, in the Ge-SnO2-B2O3 system, the difference in the volatility of GeO and SnO should increase significantly in favor of the first compound.

Research is promising for the creation of new type film-forming materials in order to obtain coatings with high optical and performance properties for interference optics in the IR range of the spectrum.

More details…