Methods and technologies of radiation control of parameters and resistance of active elements of electronics to the action of ionizing radiation

Which priority area of ​​science and technology corresponds to: energy and energy efficiency;

Research: applied.

Future prospect: to be completed;

Research level: no analogues in Ukraine;

Patent: no.

Brief description, advantages, further prospects for application.

The main results of this project are of practical importance for the branches of semiconductor materials science and instrument making. Among these results, the following should be noted.

A method and technology have been developed for modifying the parameters of elementary semiconductors and compounds by irradiation with fast electrons.

A technique for modifying the properties of solid solutions of compounds of the A2B6 and A3B5 groups for injection lasers and LEDs based on GaP is proposed.

A technique and technology for the radiation modification of Cd0.2Hg0.8Te parameters has been developed to reduce the dark resistance and current, control the sensitivity threshold, inertia and spectral characteristics of photodetectors.

Methods have been developed to increase the radiation resistance of CdZnTe IC detectors and to decrease the dark current.

Methods for calculating the characteristics of the IS field and dosimetric support during radiation modification have been developed.

To improve radiation resistance, a new design and technological version of an IR photoresistor based on a single-crystal ternary cadmium-mercury-tellurium compound is recommended. A distinctive feature of the technological process of manufacturing a photodetector is the absence of operations that can stimulate the processes of degradation of the electrophysical properties of the material of the active element.

To control the neutron fluence, the method of neutron activation analysis was used in the work. For this, spectrometric measurement channels of gamma radiation based on CdZnTe detectors have been developed. Means of the SDP310 type are used, which have a high radiation resistance, which makes it possible to measure powerful doses of gamma and electron radiation. A mock-up sample of the spectrometer was made, which made it possible to improve dosimetric support when samples were irradiated primarily with neutrons.

It is recommended to use the developed technology of radiation processing by fast electrons of semiconductor microcircuits used as primary temperature converters. As a result of such processing, the temperature coefficient of voltage of primary converters increases depending on the dose value.

The data obtained are recommended to manufacturers of microcircuits to improve the technological processes of their production, as well as to customers for the development of additions to the technical specifications for microcircuits for special purposes.


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