Purpose. For vacuum treatment of products with ions of inert and chemically active gases in the manufacture of micro- and nanoelectronics, micromechanics and optics products.
Technical properties.
Main technical characteristics of the source:
– pressure in the treatment zone 0.05-1 Pa;
– diameter of the treatment zone, not less than 200 mm;
– beam heterogeneity at a diameter of 200 mm, not more than ±5%;
– type of charge compensation autocompensation;
– treatment of dielectrics without an additional neutralizer;
– work with chemically active radicals CnFm, O2, N2, Ar, etc.;
– ion current density at the IOS output, Ar gas 0.5-6 mA/cm2;
– ion energy control range, Ar gas 50-500 eV;
– RF power 100-1000 W.
Application area. In scientific organizations of physical and technical profile, and directly at enterprises producing modern science-intensive products. In ion-plasma technologies for processing products in a vacuum with ions of inert and chemically active gases in the manufacture of micro- and nanoelectronics, micromechanics and optics products.
Advantages. Wide-aperture ion sources are produced by foreign companies, in particular Oxford Instruments (Great Britain), Veeco Instruments Inc. (USA), NPK “Platar” (Russia). The main technical characteristics of the source approximately correspond to the characteristics of the developed source, and in some parameters, such as the simultaneous extraction of ions and electrons, the direction of the generated ion-electron flow, this source is unique.
Description. The source provides generation of a combined beam of ions and electrons with a diameter of 250 mm (the diameter of the processing zone is 200 mm) with the possibility of independent control of the ion energy in the range of 50 – 500 eV and the ion current density in the range of 0.5 – 6 mA / cm2 at the ion output. The use of an ion-optical system with an RF bias provides the possibility of simultaneous extraction of positive ions and electrons. In all modes, full current compensation of the beam is provided. The source is adapted for long-term operation using chemically active gases containing fluorine. Using the ion source, the development of anisotropic etching of silicon and silicon oxide has been tested. The possibility of anisotropic etching of silicon both perpendicular to the processed surface and at an arbitrary angle has been proven, which is promising in the manufacture of GaAs microwave transistor gates.