An inorganic photoresist is proposed in the form of thin films of chalcogenide glass deposited on a substrate by thermal evaporation in a vacuum. It is known that the physicochemical properties of such layers can change under the action of light or electron beams. Using the developed selective herbalists, a positive or negative resistive effect is obtained: the dissolution rate of an exposed photoresist is significantly higher or lower than that of an unexposed one. Chalcogenide photoresists can be applied both to flat substrates and to products with complex shapes. The study of the mechanisms of photostimulated transformations made it possible to develop thin-film photosensitive media with unique characteristics. Technological processes have also been developed for the use of these inorganic photoresists in photolithography, in the production of diffractive optical elements (diffraction gratings, Fresnel lenses and their matrices), in holography (for recording relief-phase holograms), for direct mastering of optical discs.
- resolution – native resolution of the Chalcogenide layer – 1 nm;
- sensitivity to – ultraviolet, visible, near-IR region of the spectrum, electron and ion beams;
- sensitivity value:
- when recording holograms and photolithography – 5 – 50 cm2 / J;
- with laser lithography – up to 300 cm2 / J;
- application method – thermal evaporation in vacuum;
- pislyaexposition for processing – liquid digestion.
In comparison with existing analogues, the developed chalcogenide photoresist is characterized by thermal stability (up to 400 ° C), absence of shrinkage during post-exposure treatment, mechanical strength and chemical resistance. Manufacturability of using inorganic chalcogenide photoresists, since chalcogenide films can be deposited very uniform both in thickness and composition, and they can be used in the same technological processes as functional layers in microelectronics.
Optical and laser lithography, holography, production of diffractive optical elements (diffraction gratings, Fresnel lenses and their matrices), nano-optical devices (subwavelength gratings with a period of up to 100 nm), optical disc masters and rainbow holograms. These photoresists are characterized by a large value of the refractive index (2.3-3, and sometimes even higher), they are stable and do not require any heat treatment, they are transparent in the infrared (IR) region of the spectrum (from 600 nm to 12-15 μm). Such characteristics make it possible to use chalcogenide photoresists for the manufacture of effective diffraction gratings, arrays of IR microlenses, microlenses for optical fibers in combination with two- and three-dimensional photonic crystals.
In photolithography, in holography, in the production of diffractive optical elements.
Ready for implementation.
Ready for implementation.
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1 patent of Ukraine.